T178N16TOF

On-State RMS Current (It RMS) :
Non Repetitive On-State Current :
On-State Voltage :
Mounting Style :
Package / Case :
Gate Trigger Voltage (Vgt) : 2 V
Maximum Operating Temperature : + 125 C
Holding Current (Ih Max) : 200 mA
Gate Trigger Current (Igt) : 150 mA
Rated Repetitive Off-State Voltage VDRM : 1600 V
Off-State Leakage Current @ VDRM IDRM : 25 mA
Breakover Current IBO Max : 3000 A


Description

The T178N16TOF is a very good product. There is some information about the electrical properties of T178N16TOF: (1)VDRM, VRRM (repetitive peak foward off-state and reverse voltages): 400 to 1800 V; (2)ITRMSM (RMS on-state current): 300 A; (3)ITAVM (average on-state current): 178 A at tc=85 and 190 A at tc=81; (4)ITRM (repetitive peak on-state current at tp=10 ms, tvj45): 1800 A ; (5)ITSM (surge current) is 1800 A at tp=10 ms, tvj=tvj max: 2600 A.

The following is about the characteristic values of T178N16TOF: (1)VT, maximum on-state voltage at tvj=25, iT=600 A: 1.82 V; (2)V(TO), threshold voltage at tvj=tvj max: 0.92 V; (3)rT, slope resistance at tvj=tvj max: 1.5 m; (4)VGT, maximum gate trigger voltage at tvj=25, VD=6 V, RA=5: 2 V; (5)IGT, maximum gate trigger current at tvj=25, VD=6 V, RA=5: 150 mA; (6)IGT, minimum gate trigger current at tvj=tvi max, VD=6 V, RA=5: 10 mA; (7)IH, maximum holding current at tvj=25, VD=6 V, RA=5: 200 mA; (8)tgd, maximum gate controlled delay time at iG=0.75A, diG/dt=1.5 A/s: 4.5 s.

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