T162S2BVP

• Access time Flash Memory 90ns ( Max.) SRAM 85ns (Max.)
• Supply voltage Vcc=2.7 ~ 3.6V
• Ambient temperature W version Ta=-20 ~ 85
• Package : 48-pin TSOP (Type-I) , 0.4mm lead pitch

The MITSUBISHI M6MGB/T162S2BVP is a Stacked Multi Chip Package (S-MCP) that contents 16M-bits flash memory and 2M-bits Static RAM in a 48-pin TSOP (TYPE-I).

16M-bits Flash memory is a 1048576 words, 3.3V-only, and high performance non-volatile memory fabricated by CMOS
technology M6MGB/T162S2BVP for the peripheral circuit and DINOR(DIvided bit-line NOR) architecture for the memory cell. 2M-bits SRAM is a 262144bytes unsynchronous SRAM fabricated by silicon-gate CMOS technology.

M6MGB/T162S2BVP is suitable for the application of the mobile-communication-system to reduce both the mount space and weight