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T160BVP-80

Features: Organization 1048,576 word x 16bit2,097,152 word x 8 bitSupply voltage ................................ VCC = 2.7~3.6VAccess time 80ns (Vcc=3.3V+/-0.3V)90ns (Vcc=2.7~3.6V)Power DissipationRead 54 mW (Max. at 5MHz)(After Automatic Power saving) 0.33mW (typ.)Program/Erase 126 mW (Max.)Stan...

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T160BVP-80: Features: Organization 1048,576 word x 16bit2,097,152 word x 8 bitSupply voltage ................................ VCC = 2.7~3.6VAccess time 80ns (Vcc=3.3V+/-0.3V)90ns (Vcc=2.7~3.6V)Power Dissipation...

T160BVP-80 Data Sheet

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Part Number:
T160BVP-80
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/22

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Product Details

Description



Features:

Organization 1048,576 word x 16bit
2,097,152 word x 8 bit
Supply voltage ................................ VCC = 2.7~3.6V
Access time 80ns (Vcc=3.3V+/-0.3V)
90ns (Vcc=2.7~3.6V)
Power Dissipation
Read 54 mW (Max. at 5MHz)
(After Automatic Power saving) 0.33mW (typ.)
Program/Erase 126 mW (Max.)
Standby 0.33mW (typ.)
Deep power down mode 0.33mW (typ.)
Auto program for Bank(I)
Program Time 4ms (typ.)
Program Unit
(Byte Program) 1word/1byte
(Page Program) 128word/256byte
Auto program for Bank(II)
Program Time 4ms (typ.)
Program Unit 128word/256byte
Auto Erase
Erase time 40 ms (typ.)
Erase Unit
Bank(I) Boot Block 16Kword/32Kbyte x 1
Parameter Block 16Kword/32Kbyte x 7
Bank(II) Main Block 32Kword/64Kbyte x 28
Program/Erase cycles 100Kcycles
Boot Block
M5M29GB160BVP Bottom Boot
M5M29GT160BVP Top Boot
Other Functions
Soft Ware Command Control
Selective Block Lock
Erase Suspend/Resume
Program Suspend/Resume
Status Register Read
Alternating Back Ground Program/Erase Operation
Between Bank(I) and Bank(II)
Package
48-Lead, 12mm x 20mm TSOP (type-I)


Application

Code Strage
Digital Cellular Phone
Telecommunication
Mobile Computing Machine
PDA (Personal Digital Assistance)
Car Navigation System
Video Game Machine


Pinout

Connection Diagram


Specifications

Symbol
 Parameter Conditions
Min
Max
Unit
Vcc
 Vcc voltage With respect to Ground
-0.2
4.6
V
VI1
 All input or output voltage1)
-0.6
4.6
V
Ta
 Ambient temperature  
-40
85
°C
Tbs
 Temperature under bias  
-50
95
°C
Tstg
 Storage temperature  
-65
125
°C
IOUT
 Output short circuit current  
100
mA



Description

The MITSUBISHI Mobile FLASH M5M29GB/T160BVP are 3.3V-only high speed 16,777,216-bit CMOS boot block Flash Memories with alternating BGO (Back Ground Operation) feature. The BGO feature of the device allows Program or Erase operations to be performed in one bank while the M5M29GB/T160BVP simultaneously allows Read operations to be performed on the other bank. This BGO feature is suitable for mobile and personal computing, and communication products. The M5M29GB/T160BVP are fabricated by CMOS technology for the peripheral circuits and DINOR(Divided bit line NOR) architecture for the memory cells, and are available in in 48pin TSOP(I) .




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