Features: • Access time : 45/55/70/100 ns• Low-power consumption- Active: 5mA (ICC1)- Stand-by: (CMOS input/output)Max.. 15 uA for 55/70/100nsMax.. 40 uA for 45ns• Equal access and cycle time• Single +2.7V to 3.6V Power Supply• TTL compatible , Tri-state output•...
T15V2M16B: Features: • Access time : 45/55/70/100 ns• Low-power consumption- Active: 5mA (ICC1)- Stand-by: (CMOS input/output)Max.. 15 uA for 55/70/100nsMax.. 40 uA for 45ns• Equal access and...
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PARAMETER |
SYM |
MIN. |
MAX. |
UNIT |
Voltage on Any Pin Relative to VSS |
VR |
-0.2 |
+3.6 V |
V |
Power Dissipation |
PD |
- |
1.0 |
W |
Storage Temperature |
TSTG |
-55 |
+150 |
°C |
Temperature Under Bias |
IBIAS |
-10 / -40 |
+70 / +85 |
°C |
*Note: Stresses greater than those listed above Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only and function operation of the device at these or any other conditions outside those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
The T15V2M16B is a very Low Power CMOS Static RAM organized as 131,072 words by 16 bits . This device is fabricated by high performance CMOS technology. It can be operated under wide power supply voltage range from +2.7V to +3.6V.
The T15V2M16B inputs and three-state outputs are TTL compatible and allow for direct interfacing with common system bus structures. Data retention is guaranteed at a power supply voltage as low as 2V.