T1213BJ

The T1213BJ is designed as high performance glass passivated PNPN devices. These parts are intended for general purpose high current applications where high gate insensitivity is required.

Some absolute maximum ratings of T1213BJ have been concluded into several points as follow. The first one is about its repetitive peak off state voltage which would be 200V. The second one si about its on-state current which would be 12A. The third one is about its nonrept on-state current which would be 135A. The fourth one is about its nonrept on-state current which would be 120A. The fifth one is about its fusing current which would be 72 A2s. The sixth one is about its peak gate current which would be 4A. The seventh one is about its peak gate dissipation which would be 10W. The eighth one is about its gate dissipation which would be 1W. The ninth one is about its isolation voltage which would be 2500VAC. The tenth one is about its operating temperature range which would be from -40°C to 125°C. The eleventh one is about its storage temperature range which would be from -40°C to +125°C. The twelfth onw is about its soldering temperature which would be 250°C.

And some electrical characteristics about T1213BJ. The first one is about its off-state leakage current which would be max 2.5mA at Tj=125°C and would be 10uA at Tj=25°C. The second one is about its on state voltage which would be max 1.36V. The third one is about its on-state threshold voltage which would be max 0.9V. The fourth one is about its on state slope resistance which would be max 25m. The fifth one is about its gate trigger voltage which would be max 2.5V. The sixth one is about its holding current which would be max 75mA. The seventh one is about its thermal resistance junction to case which would be 2.8K/W. And so on. For more information about T1213BJ please contact us.