Features: • High Power Added Efficiency• 1xRTT Compatible• Industry Compatible, Digital Quiescent Current State Control• Analog Continuous Bias Capability with Excellent Linearity• CMOS-compatible State Logic Inputs• Excellent ACP and ALT• Excellent RX Ban...
T0377: Features: • High Power Added Efficiency• 1xRTT Compatible• Industry Compatible, Digital Quiescent Current State Control• Analog Continuous Bias Capability with Excellent Line...
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Parameter |
Symbol |
Value |
Unit |
Power supply voltage, no RF applied |
VCC1, VCC2 |
- 0.5 to + 6.0 |
VDC |
Power supply voltage, RF applied |
VCC1, VCC2 |
- 0.5 to + 5.0 |
VDC |
Bias reference voltages and bias control voltages (Pins 3 and 4 respectively) |
VREF, VCTRL |
- 0.5 to + 5.0 |
VDC |
Power dissipation |
PDISS |
2.5 |
W |
Case temperature, survival |
TC |
-40 to +100 |
°C |
Storage temperature |
Tstg |
-40 to +150 |
°C |
DC blocked RF output |
RFOUT |
-20 to +20 |
VDC |
DC grounded RF input |
RFIN |
0 to 0 |
VDC |
The T0377 is a 4 mm *4 mm 3-V CDMA PCS band power amplifier module designed for use in mobile phones. Its extremely small 4 mm *4 mm package makes it ideal for today's very small data enable phones. The module supports the IS-95 and IS-98 standards and is also 1xRTT compliant. The T0377 provides excellent RF performance with low current consumption resulting in longer talk times in portable applications. The heart of the module is a three-stage power amplifier manufactured in Atmel's SiGe technology. The T0377 provides the capability to be operated digitally (one or two bias state) or continuous quiescent current mode. In two-state quiescent current mode operation, the T0377 is controlled by the baseband processor using a CMOS-compatible ICQ control voltage. Overall current consumption of the device is minimized by selecting the lowest ICQ state available for each power output level. The module is 50- matched on the input and output, allowing the device to be used with minimal external circuitry.