SiE820DF

The SiE820DF is designed as one kind of N-channel 20-V (D-S) MOSFETs with typical applications of VRM and DC/DC conversion and synchronous rectification.

SiE820DF has eight features. (1)Halogen-free according to IEC 61249-2-21 definition. (2)Extremely low Qgd WFET technology for low switching losses. (3)TrenchFET power MOSFET. (4)Ultra low thermal resistance using top-exposed polarPAK package for double-sided cooling. (5)Leadframe-based new encapsulated package with die not exposed and same layout regardless of die size. (6)Low Qgd/Qgs ratio helps prevent shoot-through. (7)100 % Rg and UIS tested.(8)Compliant to RoHS directive 2002/95/EC.Those are all the main features.

Some absolute maximum ratings of SiE820DF have been concluded into several points as follow. (1)Its drain to source voltage would be 20V. (2)Its gate to source voltage would be +/-12V. (3)Its continuous drain current (Tj=150°C) would be 136A (silicon limit) and 50A(package limit) at Tc=25°C and would be 50A at Tc=70°C and would be 30A at Ta=25°C and would be 24A at Ta=70°C. (4)Its pulsed drain current would be 80A. (5)Its continuous source to drain diode current would be 50A at Tc=25°C and would be 4.3A at Ta=25°C. (6)Its single pulse avalanche current would be 30mJ. It should be noted that stresses above those listed in absolute maximum ratings may cause permanent damage to device.

Also some static electrical characteristics of SiE820DF are concluded as follow. (1)Its drain to source breakdown voltage would be min 20V. (2)Its Vds temperature coefficient would be typ 20mV/°C. (3)Its Vgs(th) temperature coefficient would be typ -4.8mV/°C. (4)Its gate to source threshold voltage would be min 0.6V and typ 1.4V and max 2V. (5)Its gate to source leakage would be max +/-100nA. At present we have not got so much information about this IC and we would try hard to get more information about it. If you have any question or suggestion or want to know more information of SiE820DF please contact us for details. Thank you!