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SI9948AEY

MOSFET 60V 2.6A 2.4W

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SeekIC No. : 00166029 Detail

SI9948AEY: MOSFET 60V 2.6A 2.4W

SI9948AEY Data Sheet

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Part Number:
SI9948AEY
Mfg:
Vishay/Siliconix
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Quick Details

Transistor Polarity : P-Channel Drain-Source Breakdown Voltage : 60 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 2.6 A
Resistance Drain-Source RDS (on) : 0.17 Ohms Configuration : Dual
Maximum Operating Temperature : + 175 C Mounting Style : SMD/SMT
Package / Case : SOIC-8 Narrow Packaging : Tube    

Description

Gate-Source Breakdown Voltage : +/- 20 V
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Transistor Polarity : P-Channel
Packaging : Tube
Configuration : Dual
Package / Case : SOIC-8 Narrow
Drain-Source Breakdown Voltage : 60 V
Resistance Drain-Source RDS (on) : 0.17 Ohms
Continuous Drain Current : 2.6 A


Pinout

Connection Diagram


Specifications

Parameter Symbol Limit Unit
Drain-Source Voltage VDS 60 V
Gate-Source Voltage VGS ±20
Continuous Drain Current (TJ = 175C)a TA = 25C ID ±2.6 A
TA = 70C ±2.2
Pulsed Drain Current IDM ±15
Continuous Source Current (Diode Conduction)a IS 2
Maximum Power Dissipationa TA = 25C PD 2.4 W
TA = 70C 1.7
Operating Junction and Storage Temperature Range TJ, Tstg 55 to 175



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