SI9529DY

Packaging :
Mounting Style : SMD/SMT
Maximum Operating Temperature : + 150 C
Gate-Source Breakdown Voltage : +/- 8 V
Transistor Polarity : N and P-Channel
Configuration : Dual Dual Drain
Package / Case : SOIC-8 Narrow
Resistance Drain-Source RDS (on) : 0.03 Ohms
Drain-Source Breakdown Voltage : 20 V, 12 V
Continuous Drain Current : +/- 6 A, +/- 5 A


Pinout




Specifications

Parameter		Symbol	N-Channel	P-Channel	Unit
Drain-Source Voltage		VDS	20	-12	V
Gate-Source Voltage		VGS	±8	±8
Continuous Drain Current (TJ = 150)a	TA = 25	ID	±6	±5	A
	TA = 70		±4.8	±4.0
Pulsed Drain Current		IDM	±20	±20
Continuous Source Current (Diode Conduction)a		IS	1.7	-1.7
Maximum Power Dissipationaa	TA = 25	PD	2.0		W
	TA = 70		1.3
Operating Junction and Storage Temperature Range		TJ, Tstg	55 to 150