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Si8402DB

Features: · TrenchFET® Power MOSFET· New MICRO FOOT® Chipscale PackagingReduces Footprint Area Profile (0.62 mm) andOn-Resistance Per Footprint AreaApplication· PA, Battery and Load Switch for Portable DevicesSpecifications Parameter Symbol 5secs Steady State Unit Drain-Source ...

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SeekIC No. : 004490849 Detail

Si8402DB: Features: · TrenchFET® Power MOSFET· New MICRO FOOT® Chipscale PackagingReduces Footprint Area Profile (0.62 mm) andOn-Resistance Per Footprint AreaApplication· PA, Battery and Load Switch f...

Si8402DB Data Sheet

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Part Number:
Si8402DB
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/19

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Product Details

Description



Features:

· TrenchFET® Power MOSFET
· New MICRO FOOT® Chipscale Packaging
Reduces Footprint Area Profile (0.62 mm) and
On-Resistance Per Footprint Area




Application

· PA, Battery and Load Switch for Portable Devices




Specifications

Parameter Symbol 5secs Steady State Unit
Drain-Source Voltage VDS -20 V
Gate-Source Voltage VGS ±8
Continuous Drain Current (TJ = 150)a TA = 25 ID 7.3 5.3 A
TA = 70 5.9 4.3
Pulsed Drain Current IDM 30
Continuous Source Current (Diode Conduction)a IS 2.3 1.2
Maximum Power Dissipationa TA = 25 PD 2.77 1.47 W
TA = 70 1.77 0.94
Operating Junction and Storage Temperature Range TJ, Tstg -55 to 150
Package Reflow Conditionsb VPR 215
IR/Convection 220





Description

20-V N-Channel 1.8-V (G-S) MOSFET
Si8402DB



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