MOSFET SPDT Power Select Sw
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Mounting Style : | SMD/SMT | Package / Case : | SOIC-8 |
Parameter | Symbol | 10 sec | Steady State | Unit | |
Drain-Source Voltage | Q1 | VDS | 12 | V | |
Q2 | -12 | ||||
Logic Control Input | VIN | 8 | |||
Continuous Drain Current (TJ = 150°C)a | Q1 | ID | 7.6 | 5.3 | A |
Q2 | 5.0 | 3.5 | |||
Pulsed Drain Current(10 s Pulse Width) | Q1 | IDM | 20 | ||
Q2 | 20 | ||||
Continuous Source Current (Diode Conduction)a | Q1 | IS | 2.1 | 1.15 | |
Q2 | 2.1 | 1.15 | |||
Maximum Power Dissipationa | PD | 2.35 | 1.25 | W | |
Operating Junction and Storage Temperature Range | TJ, Tstg | 55 to 150 | °C | ||
ESD Voltagec | ESD | 3 | KV |
The Si4700DY consists of two MOSFETs configured for use as a single-pole, double-throw (SPDT) switch. A single ground referenced input, controls which switch is on. The Si4700DY is intended for use in applications where two power sources are available and the circuit must select one of the two depending on the conditions. An example of such a circuit is ACPI implementation in computers where part of a circuit must switch to an "always-on" power supply when the computer is in suspend mode, but runs off the main power supply for normal operation.