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SI4300DY

MOSFET N-CH MOSFET

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SeekIC No. : 00165158 Detail

SI4300DY: MOSFET N-CH MOSFET

SI4300DY Data Sheet

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Part Number:
SI4300DY
Mfg:
Vishay/Siliconix
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/23

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 30 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 6.4 A
Resistance Drain-Source RDS (on) : 0.0185 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : SOIC-8 Narrow    

Description

Packaging :
Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : SMD/SMT
Drain-Source Breakdown Voltage : 30 V
Maximum Operating Temperature : + 150 C
Package / Case : SOIC-8 Narrow
Continuous Drain Current : 6.4 A
Resistance Drain-Source RDS (on) : 0.0185 Ohms


Features:

· TrenchFET® Power MOSFET
· LITTLE FOOT Plus™Integrated Schottky
· PWM Optimized


Application

Low Power Sychronous Rectification


Pinout

Connection Diagram


Specifications

Parameter Symbol 5 secs Steady State Unit
Drain-Source Voltage(MOSFET and Schottky) VDS 30 V
Reverse Voltage (Schottky) VDA 30
Gate-Source Voltage(MOSFET) VGS ±20
Continuous Drain Current (TJ = 150) (MOSFET)a TA = 25 ID 9 6.4 A
TA = 70 7 5.1
Pulsed Drain Current(MOSFET) IDM 40
Continuous Source Current (MOSFET Diode Conduction)a IS 2.3 1.25
Average Foward Current (Schottky) IF 2.3 1.25
Pulsed Foward Current (Schottky) IFM 20
Maximum Power Dissipation (MOSFET)a TA = 25 PD 2.5 1.38 W
TA = 70 1.6 0.88
Maximum Power Dissipation (Schottky)a TA = 25 2.2 1.25
TA = 70 1.4 080
Operating Junction and Storage Temperature Range TJ, Tstg -55 to 150



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