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PinoutSpecifications Parameter Symbol N-Channel P-Channel Unit Drain-Source Voltage VDS 30 -30 V Gate-Source Voltage VGS ±20 ±20 Continuous Drain Current (TJ = 150 )a, b TA = 25 ID ±2.5 ±1.8 A TA = 70 ±2.0 ±1.2 Pulsed Drai...

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SeekIC No. : 004490170 Detail

Si3552DV: PinoutSpecifications Parameter Symbol N-Channel P-Channel Unit Drain-Source Voltage VDS 30 -30 V Gate-Source Voltage VGS ±20 ±20 Continuous Drain Cur...

Si3552DV Data Sheet

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Part Number:: Si3552DV
Supply Ability:: 5000

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MOSFET 40V 2.25/1.76A 1.4W

Product Details

Description

Pinout

Connection Diagram

Specifications

Parameter		Symbol	N-Channel	P-Channel	Unit
Drain-Source Voltage		V_DS	30	-30	V
Gate-Source Voltage		V_GS	±20	±20
Continuous Drain Current (T_J= 150 )^{a, b}	T_A = 25	I_D	±2.5	±1.8	A
	T_A= 70		±2.0	±1.2
Pulsed Drain Current		I_DM	±8	±7
Continuous Source Current (Diode Conduction)^{a, b}		I_S	1.05	-1.05
Maximum Power Dissipation a,b	T_A= 25	P_D	1.15		W
	T_A = 70		0.73
Operating Junction and Storage Temperature Range		T_J,T_stg	55 to 150

Notes
a. Surface Mounted on FR4 Board.
b. t 5 sec

Description

Si3552DV N-/P-Channel 30-V (D-S) Rated MOSFET

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Si3552DV

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