Features: `Dual-band RF synthesizers` RF1: 2300 to 2500 MHz`RF2: 2025 to 2300 MHz`IF synthesizer ` 62.5 to 1000 MHz`Integrated VCOs, loop filters,varactors, and resonators` Minimal external components required` Low phase noise` 5 A standby current` 25.7 mA typical supply current` 2.9 to 3.6 V oper...
Si2200: Features: `Dual-band RF synthesizers` RF1: 2300 to 2500 MHz`RF2: 2025 to 2300 MHz`IF synthesizer ` 62.5 to 1000 MHz`Integrated VCOs, loop filters,varactors, and resonators` Minimal external componen...
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Parameter | Symbol | Value | Unit |
DC Supply Voltage | VDD | 0.5 to 4.0 | V |
Input Current3 | IIN | ±10 | mA |
Input Voltage3 | VIN | 0.3 to VDD+0.3 | V |
Storage Temperature Range | TSTG | 55 to 150 |
Notes:
1. Permanent device damage may occur if the above Absolute Maximum Ratings are exceeded. Functional operation should be restricted to the conditions as specified in the operational sections of this data sheet. Exposure to absolute
maximum rating conditions for extended periods may affect device reliability.
2. This device is a high performance RF integrated circuit with an ESD rating of < 2 kV. Handling and assembly of this device should only be done at ESD-protected workstations.
3. For signals SCLK, SDATA, SEN, PWDN, and XIN.
The Si2200 is a monolithic integrated circuit that performs both IF and RF synthesis for wireless communications applications. The Si2200 includes three VCOs, loop filters, reference and VCO dividers, and phase detectors. Divider and powerdown settings are programmable through a three-wire serial interface.