Features: · TrenchFET Power MOSFETS: 1.8-V Rated· ESD Protected: 3000 V· Thermally Enhanced SC-70 PackageApplication· Load Switching· PA Switch· Level SwitchPinoutSpecifications Parameter Symbol 5 secs Steady State Unit Drain-Source Voltage VDS -12 V Gate-Source Voltage VGS ±1...
Si1417EDH: Features: · TrenchFET Power MOSFETS: 1.8-V Rated· ESD Protected: 3000 V· Thermally Enhanced SC-70 PackageApplication· Load Switching· PA Switch· Level SwitchPinoutSpecifications Parameter Sym...
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Parameter | Symbol | 5 secs | Steady State | Unit | |
Drain-Source Voltage | VDS | -12 | V | ||
Gate-Source Voltage | VGS | ±12 | |||
Continuous Drain Current (TJ = 150)a | TA = 25 | ID | -3.3 | -2.7 | A |
TA = 85 | -1.4 | -1.2 | |||
Continuous Source Current (Diode Conduction)a | IS | -1.4 | -0.9 | ||
Pulsed Drain Current | IDM | -5 | |||
Maximum Power Dissipationa | TA = 25 | PD | 1.56 | 1.0 | W |
TA = 85 | 0.81 | 0.52 | |||
Operating Junction and Storage Temperature Range | TJ, Tstg | -55 to 150 |