Si1417EDH

Features: · TrenchFET Power MOSFETS: 1.8-V Rated· ESD Protected: 3000 V· Thermally Enhanced SC-70 PackageApplication· Load Switching· PA Switch· Level SwitchPinoutSpecifications Parameter Symbol 5 secs Steady State Unit Drain-Source Voltage VDS -12 V Gate-Source Voltage VGS ±1...

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SeekIC No. : 004489912 Detail

Si1417EDH: Features: · TrenchFET Power MOSFETS: 1.8-V Rated· ESD Protected: 3000 V· Thermally Enhanced SC-70 PackageApplication· Load Switching· PA Switch· Level SwitchPinoutSpecifications Parameter Sym...

floor Price/Ceiling Price

Part Number:
Si1417EDH
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/19

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Product Details

Description



Features:

· TrenchFET Power MOSFETS: 1.8-V Rated
· ESD Protected: 3000 V
· Thermally Enhanced SC-70 Package





Application

· Load Switching
· PA Switch
· Level Switch





Pinout

  Connection Diagram




Specifications

Parameter Symbol 5 secs Steady State Unit
Drain-Source Voltage VDS -12 V
Gate-Source Voltage VGS ±12
Continuous Drain Current (TJ = 150)a TA = 25 ID -3.3 -2.7 A
TA = 85 -1.4 -1.2
Continuous Source Current (Diode Conduction)a IS -1.4 -0.9
Pulsed Drain Current IDM -5
Maximum Power Dissipationa TA = 25 PD 1.56 1.0 W
TA = 85 0.81 0.52
Operating Junction and Storage Temperature Range TJ, Tstg -55 to 150





Description

Si1417EDH P-Channel 12-V (D-S) MOSFET




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