Features: ` High-Side Switching` Low On-Resistance: 4 ` Low Threshold: 2 V (typ)` Fast Switching Speed: 20 ns (typ)` Low Input Capacitance: 20 pF (typ)` Miniature Package` Gate-Source ESD ProtectionApplication· Drivers: Relays, Solenoids, Lamps, Hammers,Displays, Memories, Transistors, etc.· Batte...
Si1021R: Features: ` High-Side Switching` Low On-Resistance: 4 ` Low Threshold: 2 V (typ)` Fast Switching Speed: 20 ns (typ)` Low Input Capacitance: 20 pF (typ)` Miniature Package` Gate-Source ESD Protection...
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Parameter | Symbol | Limit | Unit | |
Drain-Source Voltage | VDS | -60 | V | |
Gate-Source Voltage | VGS | ±20 | ||
Continuous Drain Currenta | TA = 25 | ID | -190 | mA |
TA = 85 | -135 | |||
Pulsed Drain Currentb | IDM | -650 | ||
Power Dissipationa | TA = 25 | PD | 250 | mW |
TA = 85 | 130 | |||
Maximum Junction-to-Ambienta | RthJA | 500 | /W | |
Operating Junction and Storage Temperature Range | TJ, Tstg | 55 to 150 |