Features: ` High-Side Switching` Low On-Resistance: 0.7 ` Low Threshold: 0.8 V (typ)` Fast Swtiching Speed: 10 ns`1.8-V Operation` Gate-Source ESD ProtectionApplication· Drivers: Relays, Solenoids, Lamps,Hammers, Displays, Memories· Battery Operated Systems· Power Supply Converter Circuits· Load/P...
Si1012X: Features: ` High-Side Switching` Low On-Resistance: 0.7 ` Low Threshold: 0.8 V (typ)` Fast Swtiching Speed: 10 ns`1.8-V Operation` Gate-Source ESD ProtectionApplication· Drivers: Relays, Solenoids, ...
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Parameter | Symbol | 5 secs | Steady State | Unit | |
Drain-Source Voltage | VDS | -20 | V | ||
Gate-Source Voltage | VGS | ±6 | |||
Continuous Drain Current (TJ = 150)a | TA = 25 | ID | 600 | 500 | mA |
TA = 85 | 400 | 350 | |||
Continuous Source Current (Diode Conduction)a | IS | 275 | 250 | ||
Pulsed Drain Current | IDM | 1000 | |||
Maximum Power Dissipationb for SC-75 | TA = 25 | PD | 175 | 150 | mW |
TA = 85 | 90 | 80 | |||
Maximum Power Dissipationb for SC-89 | TA = 25 | 275 | 250 | ||
TA = 85 | 160 | 140 | |||
Operating Junction and Storage Temperature Range | TJ, Tstg | -55 to 150 | |||
Gate-Source ESD Rating (HBM, Method 3015) | ESD | 2000 | V |