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Si1012R

Features: ` High-Side Switching` Low On-Resistance: 0.7 ` Low Threshold: 0.8 V (typ)` Fast Swtiching Speed: 10 ns` 1.8-V Operation` Gate-Source ESD ProtectionApplication· Drivers: Relays, Solenoids, Lamps,Hammers, Displays, Memories· Battery Operated Systems· Power Supply Converter Circuits· Load/...

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SeekIC No. : 004489842 Detail

Si1012R: Features: ` High-Side Switching` Low On-Resistance: 0.7 ` Low Threshold: 0.8 V (typ)` Fast Swtiching Speed: 10 ns` 1.8-V Operation` Gate-Source ESD ProtectionApplication· Drivers: Relays, Solenoids,...

Si1012R Data Sheet

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Part Number:
Si1012R
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/18

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Product Details

Description



Features:

` High-Side Switching
` Low On-Resistance: 0.7
` Low Threshold: 0.8 V (typ)
` Fast Swtiching Speed: 10 ns
` 1.8-V Operation
` Gate-Source ESD Protection




Application

· Drivers: Relays, Solenoids, Lamps,Hammers, Displays, Memories
· Battery Operated Systems
· Power Supply Converter Circuits
· Load/Power Switching Cell Phones, Pagers




Pinout

Connection Diagram




Specifications

Parameter Symbol 5 secs Steady State Unit
Drain-Source Voltage VDS -20 V
Gate-Source Voltage VGS ±6
Continuous Drain Current (TJ = 150)a TA = 25 ID 600 500 mA
TA = 85 400 350
Continuous Source Current (Diode Conduction)a IS 275 250
Pulsed Drain Current IDM 1000
Maximum Power Dissipationb for SC-75 TA = 25 PD 175 150 mW
TA = 85 90 80
Maximum Power Dissipationb for SC-89 TA = 25 275 250
TA = 85 160 140
Operating Junction and Storage Temperature Range TJ, Tstg -55 to 150
Gate-Source ESD Rating (HBM, Method 3015) ESD 2000 V





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