Features: • P1dB =35dBm @ 5.2V• Three Stages of Gain: 35dB• 802.11g 54Mb/s Class AB Performance• Pout = 27dBm @ 2.5% EVM, Vcc 5.2V,900mA• Active Bias with Adjustable Current• On-chip Output Power Detector• Low Thermal Resistance• Power up/down contro...
SZM-3166Z: Features: • P1dB =35dBm @ 5.2V• Three Stages of Gain: 35dB• 802.11g 54Mb/s Class AB Performance• Pout = 27dBm @ 2.5% EVM, Vcc 5.2V,900mA• Active Bias with Adjustable Cu...
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Parameters |
Value |
Unit |
VC3 Collector Bias Current (IVC3) |
1500 |
mA |
VC2 Collector Bias Current (IVC2) |
600 |
mA |
VC1 Collector Bias Current (IVC1) |
300 |
mA |
**Device Voltage (VD) |
9.0 |
V |
Power Dissipation |
6 |
W |
Operating Lead Temperature (TL) |
-40 to +85 |
|
*Max RF output Power for 50 ohm continuous long term operation |
30 |
dBm |
Max RF Input Power for 50 ohm output load |
29 |
dBm |
Max RF Input Power for 10:1 VSWR output load |
2 |
dBm |
Max Storage Temperature |
+150 |
|
Operating Junction Temperature (TJ) |
+150 |
|
ESD Human Body Model |
Class 1C |
Sirenza Microdevices' SZM-3166Z is a high linearity class AB Heterojunction Bipolar Transistor (HBT) amplifier housed in a low-cost surface-mountable plastic Q-FlexN multi-chip module package. This HBT amplifier SZM-3166Z is made with InGaP on GaAs device technology and fabricated with MOCVD for an ideal combination of low cost and high reliability.
SZM-3166Z is specifically designed for 802.16 customer premise equipment (CPE) terminals in the 3.3-3.6 GHz bands. SZM-3166Z can run from a 3V to 5.2V supply. The external output match and bias adjustability allows load line optimization for other applications covering 3.5-3.8GHz. It features an output power detector, on/off power control and high RF overdrive robustness. A 20dB step attenuator feature can be utilized by swtiching the second stage Power up/down control. SZM-3166Z features a RoHS compliant and Green package with matte tin finish, designated by the 'Z' suffix.