IC AMP HBT GAAS 5.9GHZ 16-QFN
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Series: | - | Manufacturer: | RFMD | ||
Processor Series : | Stellaris 1000 | Frequency: | 4.9GHz ~ 5.9GHz | ||
P1dB: | 27.5dBm (562.3mW) ~ 29dBm (794.3mW) | Gain: | 30.7dB ~ 34.7dB @ 4.9GHz | ||
Noise Figure: | 6.3dB | RF Type: | 802.11a/Wi-Fi, 802.16/WiMax, ISM, WLAN | ||
Voltage - Supply: | 5V | Current - Supply: | 230mA ~ 310mA | ||
Test Frequency: | 5.875GHz | Package / Case: | 16-VFQFN Exposed Pad |
Parameters |
Value |
Unit |
VC3 Collector Bias Current (pin16) |
500 |
mA |
VC2 Collector Bias Current (pin18) |
225 |
mA |
VC1 Collector Bias Current (pin19) |
75 |
mA |
Device Voltage (VD) |
7.0 |
V |
Power Dissipation |
3.4 |
W |
Operating Lead Temperature (TL) |
-40 to +85 |
|
RF Input Power for 50 ohm RF out load |
15 |
dBm |
RF Input Power for 10:1 VSWR RF out load |
2 |
dBm |
Storage Temperature Range |
-40 to +150 |
|
Operating Junction Temperature (TJ) |
+150 |
|
ESD Human Body Model |
>1000 |
V |
Operation of this device beyond any one of these limits may cause permanent damage. For reliable continuous operation the device voltage and current must not exceed the maximum operating values specified in the table on page one. Bias conditions should also satisfy the following expression: IDVD < (TJ - TL) / RTH' j-l |
Sirenza Microdevices' SZA-5044 is a high efficiency class AB Heterojunction Bipolar Transistor (HBT) amplifier housed in a low-cost surface-mountable plastic package. This HBT amplifier SZA-5044 is made with InGaP on GaAs device technology and fabricated with MOCVD for an ideal combination of low cost and high reliability.
SZA-5044 is specifically designed as a final stage for 802.11a equipment in the 4.9 - 5.9 GHz band for a 5V supply. Optimized on-chip impedance matching circuitry provides a 50 nominal RF input impedance. A single external output matching circuit covers the entire 4.9- 5.9GHz band simultaneously. The external output of SZA-5044 match allows for load line optimization for other applications or optimized performance over narrower bands.