SXT-289

Features: • Patented High Reliability GaAs HBT Technology• High Output 3rd Order Intercept : +42 dBm typ. at 2450 MHz• Surface-Mountable Power Plastic PackageApplication• PCS Systems• WLL, Wideband CDMA Systems• ISM SystemsSpecifications Parameter Absolute...

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SXT-289 Picture
SeekIC No. : 004509807 Detail

SXT-289: Features: • Patented High Reliability GaAs HBT Technology• High Output 3rd Order Intercept : +42 dBm typ. at 2450 MHz• Surface-Mountable Power Plastic PackageApplication• PCS...

floor Price/Ceiling Price

Part Number:
SXT-289
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/10/31

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Product Details

Description



Features:

• Patented High Reliability GaAs HBT Technology
• High Output 3rd Order Intercept : +42 dBm typ. at 2450 MHz
• Surface-Mountable Power Plastic Package



Application

• PCS Systems
• WLL, Wideband CDMA Systems
• ISM Systems



Specifications

Parameter Absolute Limit
Device Voltage 6V
Device Current 200mA
Power Dissipation 1500mW
RF Input Power 100mW
Junction Temperature +150°C
Operating Temperature -40°C to +85°C
Storage Temperature -65°C to +150°C



Description

Stanford Microdevices' SXT-289 amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor (HBT) MMIC housed in low-cost surface-mountable plastic package. These HBT MMICs are fabricated using molecular beam epitaxial growth technology which produces reliable and consistent performance from wafer to wafer and lot to lot.

The SXT-289 is  specially designed for use as driver devices for infrastructure equipment in the 1800-2500 MHz cellular, ISM, WLL and Wideband CDMA applications.

Its high linearity makes SXT-289 an ideal choice for multi-carrier as well as digital applications.




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