Features: • Patented High Reliability GaAs HBT Technology• High Output 3rd Order Intercept : +42 dBm typ. at 2450 MHz• Surface-Mountable Power Plastic PackageApplication• PCS Systems• WLL, Wideband CDMA Systems• ISM SystemsSpecifications Parameter Absolute...
SXT-289: Features: • Patented High Reliability GaAs HBT Technology• High Output 3rd Order Intercept : +42 dBm typ. at 2450 MHz• Surface-Mountable Power Plastic PackageApplication• PCS...
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Parameter | Absolute Limit |
Device Voltage | 6V |
Device Current | 200mA |
Power Dissipation | 1500mW |
RF Input Power | 100mW |
Junction Temperature | +150°C |
Operating Temperature | -40°C to +85°C |
Storage Temperature | -65°C to +150°C |
Stanford Microdevices' SXT-289 amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor (HBT) MMIC housed in low-cost surface-mountable plastic package. These HBT MMICs are fabricated using molecular beam epitaxial growth technology which produces reliable and consistent performance from wafer to wafer and lot to lot.
The SXT-289 is specially designed for use as driver devices for infrastructure equipment in the 1800-2500 MHz cellular, ISM, WLL and Wideband CDMA applications.
Its high linearity makes SXT-289 an ideal choice for multi-carrier as well as digital applications.