MOSFET 60V 10A 37W
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Transistor Polarity : | P-Channel | Drain-Source Breakdown Voltage : | 60 V | ||
Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | 10 A | ||
Resistance Drain-Source RDS (on) : | 170 mOhms | Configuration : | Single | ||
Maximum Operating Temperature : | + 175 C | Mounting Style : | Through Hole | ||
Package / Case : | TO-251-3 | Packaging : | Tube |
ABSOLUTE MAXIMUM RATINGS (TC = 25 UNLESS OTHERWISE NOTED) | ||||
Parameter |
Symbol | Limit | Unit | |
Gate-Source Voltage | VGS | ±20 | ||
Continuous Drain Current (TJ = 150) |
TC = 25 | ID | -10 | A |
TC = 100 | -7 | |||
Pulsed Drain Current | IDM | -20 | ||
Continuous Source Current (Diode Conduction) |
IS |
-10 | ||
Avalanche Current | IAR | -10 | ||
Repetitive Avalanche Energy (Duty Cycle 1%) | L = 0.1 mH | EAR | 5 | mJ |
Maximum Power Dissipation | TC = 25 | PD | 37 | W |
TA = 25 | 2a | |||
Operating Junction and Storage Temperature Range | TJ, Tstg | −55 to 175 |