MOSFET 100V 6A
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Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 100 V |
Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | 6.5 A |
Resistance Drain-Source RDS (on) : | 0.2 Ohms | Configuration : | Single |
Maximum Operating Temperature : | + 150 C | Mounting Style : | Through Hole |
Package / Case : | TO-251 |
Parameter | Symbol | Limit | Unit | |
Drain-Source Voltage | VDS | 100 | V | |
Gate-Source Voltage | VGS | ±20 | ||
Continuous Drain Current (TJ = 175) | TC = 25 | ID | 6.5 | A |
TC = 125 | 3.75 | |||
Pulsed Drain Current | IDM | 8.0 | ||
Continuous Source Current (Diode Conduction) | IS | 6.5 | ||
Avalanche Current | IAR | 5.0 | ||
Repetitive Avalanche Energy (Duty Cycle 1%) | L = 0.1 mH | EAR | 1.25 | mJ |
Maximum Power Dissipation | TC = 25 | PD | 20 | W |
TA = 25 | 1.5 | |||
Operating Junction and Storage Temperature Range | TJ, Tstg | 55 to 175 |