MOSFET 100V 6A
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| Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 100 V |
| Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | 6.5 A |
| Resistance Drain-Source RDS (on) : | 0.2 Ohms | Configuration : | Single |
| Maximum Operating Temperature : | + 150 C | Mounting Style : | Through Hole |
| Package / Case : | TO-251 |

| Parameter | Symbol | Limit | Unit | |
| Drain-Source Voltage | VDS | 100 | V | |
| Gate-Source Voltage | VGS | ±20 | ||
| Continuous Drain Current (TJ = 175) | TC = 25 | ID | 6.5 | A |
| TC = 125 | 3.75 | |||
| Pulsed Drain Current | IDM | 8.0 | ||
| Continuous Source Current (Diode Conduction) | IS | 6.5 | ||
| Avalanche Current | IAR | 5.0 | ||
| Repetitive Avalanche Energy (Duty Cycle 1%) | L = 0.1 mH | EAR | 1.25 | mJ |
| Maximum Power Dissipation | TC = 25 | PD | 20 | W |
| TA = 25 | 1.5 | |||
| Operating Junction and Storage Temperature Range | TJ, Tstg | 55 to 175 | ||