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SUP40N10-30-GE3

MOSFET N-CH D-S 100V TO220AB

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SeekIC No. : 003430726 Detail

SUP40N10-30-GE3: MOSFET N-CH D-S 100V TO220AB

SUP40N10-30-GE3 Data Sheet

floor Price/Ceiling Price

US $ .98~.98 / Piece | Get Latest Price
Part Number:
SUP40N10-30-GE3
Mfg:
Supply Ability:
5000

Price Break

  • Qty
  • 0~500
  • Unit Price
  • $.98
  • Processing time
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/12/26

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Product Details

Quick Details

Series: TrenchFET® Manufacturer: Vishay Siliconix
FET Type: MOSFET N-Channel, Metal Oxide Transistor Type: -
Current - Collector (Ic) (Max): - FET Feature: Standard
Drain to Source Voltage (Vdss): 100V Continuous Drain Current : 15 A
Voltage - Collector Emitter Breakdown (Max): - Current - Continuous Drain (Id) @ 25° C: 38.5A
Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): -
Rds On (Max) @ Id, Vgs: 30 mOhm @ 15A, 10V DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) @ Vgs: 60nC @ 10V
Frequency - Transition: - Input Capacitance (Ciss) @ Vds: 2400pF @ 25V
Power - Max: 3.1W Mounting Type: Through Hole
Package / Case: TO-220-3 Supplier Device Package: TO-220AB    

Description

Manufacturer: Vishay Siliconix
FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Series: TrenchFET®
FET Feature: Standard
Packaging: Tape & Reel (TR)
Drain to Source Voltage (Vdss): 100V
Vgs(th) (Max) @ Id: 4V @ 250µA
Power - Max: 3.1W
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Gate Charge (Qg) @ Vgs: 60nC @ 10V
Input Capacitance (Ciss) @ Vds: 2400pF @ 25V
Rds On (Max) @ Id, Vgs: 30 mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25° C: 38.5A


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