SUM60N02-3m9P

The SUM60N02-3m9P is designed as one kind of N-Channel 20V (D-S) 175°C MOSFETs with typical applications of OR-ing.

SUM60N02-3m9P has four features. (1)TrenchFET power MOSFET. (2)75°C junction temperature. (3)100% Rg tested. (4)100% UIS tested. Those are all the main features.

Some absolute maximum ratings of SUM60N02-3m9P have been concluded into several points as follow. (1)Its drain to source voltage would be 20V. (2)Its gate to source voltage would be ±20V. (3)Its continuous drain current(Tj=175°C) would be 60A. (4)Its pulsed drain current would be 120A. (5)Its single pulse avalanche current would be 50A. (6)Its single pulse avalanche energy would be 125mJ. (7)Its maximum power disslpation would be 120W at Tc=25°C and would be 3.75W at Ta=25°C. (8)Its operating junction would be -55°C to 175°C. (9)Its storage temperature range would be from -55°C to 175°C. It should be noted that stresses above those listed in absolute maximum ratings may cause permanent damage to device.

Also some static electrical characteristics of SUM60N02-3m9P are concluded as follow. (1)Its drain to source breakdown voltage would be min 20V. (2)Its gate to threshold voltage would be min 1.0V and max 3V. (3)Its gate to body leakage would be max +/-100nA. (4)Its zero gate voltage drain current would be max 1A at Vds=20V, Vgs=0V and would be max 50A at Vds=20V and Vgs=0V and Tj=125°C and would be max 250A at Vds=20V and Vgs=0V and Tj=175°C. (5)Its on to state drain current would be min 100A. (6)Its drain to source on to state resistance would be typ 0.0031 and max 0.0039 at Vgs=10V, Id=20A and would be max 0.0059 at Vgs=10V, Id=20A, Tj=125°C. At present we have not got so much information about this IC and we would try hard to get more information about it. If you have any question or suggestion or want to know more information about SUM60N02-3m9P please contact us for details. Thank you!