Features: `TrenchFET® Power MOSFETS`175 Junction Temperature`New Low Thermal Resistance PackageSpecifications Parameter Symbol Limit Unit Drain-Source Voltage VDS 200 V Gate-Source Voltage VGS ±20 V Continuous Drain Current(TJ=175) TC = 25 ID 9 A TC = 125 5.2 ...
SUM09N20-270: Features: `TrenchFET® Power MOSFETS`175 Junction Temperature`New Low Thermal Resistance PackageSpecifications Parameter Symbol Limit Unit Drain-Source Voltage VDS 200 V Gate-Sou...
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Parameter | Symbol | Limit | Unit | |
Drain-Source Voltage | VDS | 200 | V | |
Gate-Source Voltage | VGS | ±20 | V | |
Continuous Drain Current(TJ=175) | TC = 25 | ID | 9 | A |
TC = 125 | 5.2 | |||
Pulsed Drain Current | IDM | 10 | A | |
Avalanche Current | IA | 7 | A | |
Repetitive Avalanche Energya |
L = 0.1 mH | EAR | 2.45 | mj |
Maximum Power Dissipationa | TC = 25 | PD | 60b | W |
TA = 25 | 3.75 | |||
Operating Junction and Storage Temperature Range | TJ,Tstg | -55 to 175 |