SUD40N02-08

Transistor Polarity : N-Channel
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 20 V
Continuous Drain Current : 40 A
Gate-Source Breakdown Voltage : +/- 12 V
Package / Case : TO-252-3
Resistance Drain-Source RDS (on) : 8.5 mOhms


Specifications

SPECIFICATIONS (TJ = 25°C UNLESS OTHERWISE NOTED)
Parameter	Symbol	Test Conditions	Simulated Data	Measured Data	Unit
Static
Gate Threshold Voltage	VGS(th)	VDS = VGS, ID = 250 A	0.86		V
On-State Drain Currenta	ID(on)	VDS = 5 V, VGS = 4.5 V	339		A
Drain-Source On-State Resistancea	rDS(on)	VGS = 4.5 V, ID = 20 A	0.0065	0.0068
		VGS = 4.5V, ID = 20A, TJ = 150°C	0.0106	0.0104
		VGS = 2.5V, ID =20 A	0.012	0.011
Forward Voltagea	VSD	IS = 100 A, VGS = 0 V	0.90	1.2	V
Dynamicb
Input Capacitance	Ciss	VGS = 0 V, VDS = 25 V, f = 1 MHz	2753	2660	pF
Output Capacitance	Coss		768	730
Reverse Transfer Capacitance	Crss		304	375
Total Gate Chargec	Qg	VDS = 10 V, VGS = 4.5 V, ID = 40 A	26	26	nC
Gate-Source Chargec	Qgs		5	5
Gate-Drain Chargec	Qgd		7	7
Turn-On Delay Timec	td(on)	VDD = 10 V, RL = 0.25 ID= 40A, VGEN =4.5 V, RG = 2.5	19	20	ns
Rise Timec	tr		30	120
Turn-Off Delay Timec	td(off)		76	45
Fall Timec	tf		49	20
Source-Drain Reverse Recovery Time	trr	IF = 40A, di/dt = 100 A/s	31	35

Notes
a. Pulse test; pulse width 300 µs, duty cycle 2%.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.


Description

The attached spice model of the SUD40N02-08 describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the −55 to 125°C temperature ranges under the pulsed 0 to 10V gate drive. The saturated output impedance is best fit at the gate bias near the threshold voltage.

A novel gate-to-drain feedback capacitance network of the SUD40N02-08 is used to model the gate charge characteristics while avoiding convergence difficulties of the switched Cgd model. All model parameter values are optimized to provide a best fit to the measured electrical data and are not intended as an exact physical interpretation of the device.