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SUD23N06-31L

MOSFET 60V 23A 100W

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SeekIC No. : 00164713 Detail

SUD23N06-31L: MOSFET 60V 23A 100W

SUD23N06-31L Data Sheet

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Part Number:
SUD23N06-31L
Mfg:
Vishay/Siliconix
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/28

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 60 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 9.1 A
Resistance Drain-Source RDS (on) : 31 mOhms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : SMD/SMT
Package / Case : TO-252-3 Packaging : Reel    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Packaging : Reel
Resistance Drain-Source RDS (on) : 31 mOhms
Drain-Source Breakdown Voltage : 60 V
Package / Case : TO-252-3
Continuous Drain Current : 9.1 A


Features:

` TrenchFET® Power MOSFET
` 175 Junction Temperature


Application

· Automotive
    - 12-V Systems


Specifications

ABSOLUTE MAXIMUM RATINGS (TC = 25 UNLESS OTHERWISE NOTED)

Parameter

 Symbol Limit Unit
Gate-Source Voltage VGS ±20

V

Continuous Drain Current(TJ = 175)b TC = 25 ID 23 A
TC = 100 16.5
Pulsed Drain Current IDM 50
Continuous Source Current (Diode Conduction)

IS

23

Avalanche Current IAR 20
Repetitive Avalanche Energy (Duty Cycle 1%) L = 0.1 mH EAR 20 mJ
Maximum Power Dissipationa TC = 25 PD 100 W
TA = 25 3a
Operating Junction and Storage Temperature Range TJ, Tstg -55 to 175



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