MOSFET 150V 15A 62W
SeekIC Buyer Protection PLUS - newly updated for 2013!
268 Transactions
All payment methods are secure and covered by SeekIC Buyer Protection PLUS.
Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 150 V | ||
Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | 15 A | ||
Resistance Drain-Source RDS (on) : | 92 mOhms | Configuration : | Single | ||
Maximum Operating Temperature : | + 175 C | Mounting Style : | SMD/SMT | ||
Package / Case : | TO-252-3 | Packaging : | Reel |
SPECIFICATIONS (TJ = 25°C UNLESS OTHERWISE NOTED) | |||||
Parameter | Symbol | Test Conditions | Simulated Data |
Measured Data |
Unit |
Static | |||||
Gate Threshold Voltage | VGS(th) | VDS = VGS, ID = 250 A | 2.6 | V | |
On-State Drain Currentb | ID(on) | VDS =5 V, VGS = 10 V | 71 | A | |
Drain-Source On-State Resistanceb | rDS(on) | VGS = 10V, ID = 15A | 0.069 | 0.077 | Ω |
VGS = 10 V, ID = 15A, TJ = 125°C | 0.115 | ||||
VGS = 10 V, ID = 15A, TJ = 175°C | 0.139 | ||||
VGS = 6V, ID = 10A |
0.080 | 0.081 | |||
Forward Voltageb | VSD | IF= 15A, VGS = 0 V | 0.89 | 0.90 | V |
Dynamica | |||||
Input Capacitance | Ciss | VGS = 0 V, VDS = 25 V, f = 1 MHz | 897 | 4300 | pF |
Output Capacitance | Coss | 126 | 450 | ||
Reverse Transfer Capacitance | Crss | 73 | 175 | ||
Total Gate Chargec | Qg | VDS =75 V, VGS = 10 V, ID =15A | 21 | 65 | nC |
Gate-Source Chargec | Qgs | 5.5 | 25 | ||
Gate-Drain Chargec | Qgd | 7 | 19 | ||
Turn-On Delay Timec | td(on) | VDD = 75V, RL = 5Ω ID15A, VGEN = 10 V, RG = 2.5 Ω |
12 | 15 | ns |
Rise Timec | tr | 19 | 12 | ||
Turn-Off Delay Timec | td(off) | 36 | 30 | ||
Fall Timec | tf | 41 | 10 | ||
Source-Drain Reverse Recovery Time | trr | IF = 15A, di/dt = 100 A/µs | 48 | 125 |
The attached spice model of SUD15N15-95 describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the −55 to 125°C temperature ranges under the pulsed 0 to 10V gate drive. The saturated output impedance of SUD15N15-95 is best fit at the gate bias near the threshold voltage.
A novel gate-to-drain feedback capacitance network of SUD15N15-95 is used to model the gate charge characteristics while avoiding convergence difficulties of the switched Cgd model. All model parameter values are optimized to provide a best fit to the measured electrical data and are not intended as an exact physical interpretation of the SUD15N15-95.