SUD15N15-95

MOSFET 150V 15A 62W

product image

SUD15N15-95 Picture
SeekIC No. : 00165013 Detail

SUD15N15-95: MOSFET 150V 15A 62W

floor Price/Ceiling Price

Part Number:
SUD15N15-95
Mfg:
Vishay/Siliconix
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/12/24

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 150 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 15 A
Resistance Drain-Source RDS (on) : 92 mOhms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : SMD/SMT
Package / Case : TO-252-3 Packaging : Reel    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 150 V
Continuous Drain Current : 15 A
Package / Case : TO-252-3
Resistance Drain-Source RDS (on) : 92 mOhms


Specifications

SPECIFICATIONS (TJ = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol Test Conditions Simulated
Data
Measured
Data
Unit
Static
Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 A 2.6 V
On-State Drain Currentb ID(on) VDS =5 V, VGS = 10 V 71 A
Drain-Source On-State Resistanceb rDS(on) VGS = 10V, ID = 15A 0.069 0.077
VGS = 10 V, ID = 15A, TJ = 125°C 0.115
VGS = 10 V, ID = 15A, TJ = 175°C 0.139

VGS = 6V, ID = 10A

0.080 0.081
Forward Voltageb VSD IF= 15A, VGS = 0 V 0.89 0.90 V
Dynamica
Input Capacitance Ciss VGS = 0 V, VDS = 25 V, f = 1 MHz 897 4300 pF
Output Capacitance Coss 126 450
Reverse Transfer Capacitance Crss 73 175
Total Gate Chargec Qg VDS =75 V, VGS = 10 V, ID =15A 21 65 nC
Gate-Source Chargec Qgs 5.5 25
Gate-Drain Chargec Qgd 7 19
Turn-On Delay Timec td(on) VDD = 75V, RL = 5
ID15A, VGEN = 10 V, RG = 2.5
12 15 ns
Rise Timec tr 19 12
Turn-Off Delay Timec td(off) 36 30
Fall Timec tf 41 10
Source-Drain Reverse Recovery Time trr IF = 15A, di/dt = 100 A/µs 48 125





Description

The attached spice model of SUD15N15-95 describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the −55 to 125°C temperature ranges under the pulsed 0 to 10V gate drive. The saturated output impedance of SUD15N15-95 is best fit at the gate bias near the threshold voltage.

A novel gate-to-drain feedback capacitance network of SUD15N15-95 is used to model the gate charge characteristics while avoiding convergence difficulties of the switched Cgd model. All model parameter values are optimized to provide a best fit to the measured electrical data and are not intended as an exact physical interpretation of the SUD15N15-95.



SUD15N15-95 N-Channel 150-V (D-S) 175C MOSFET




Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
Crystals and Oscillators
Industrial Controls, Meters
Cable Assemblies
Tapes, Adhesives
803
Isolators
Power Supplies - Board Mount
View more