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STY80NM60N

MOSFET N-channel 600 V, 74A Power II Mdmesh

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SeekIC No. : 00159045 Detail

STY80NM60N: MOSFET N-channel 600 V, 74A Power II Mdmesh

STY80NM60N Data Sheet

floor Price/Ceiling Price

US $ 13.42~14.15 / Piece | Get Latest Price
Part Number:
STY80NM60N
Mfg:
STMicroelectronics
Supply Ability:
5000

Price Break

  • Qty
  • 0~414
  • 414~500
  • Unit Price
  • $14.15
  • $13.42
  • Processing time
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 600 V
Gate-Source Breakdown Voltage : +/- 25 V Continuous Drain Current : 74 A
Resistance Drain-Source RDS (on) : 0.035 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : Max247 Packaging : Tube    

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Drain-Source Breakdown Voltage : 600 V
Gate-Source Breakdown Voltage : +/- 25 V
Continuous Drain Current : 74 A
Package / Case : Max247
Resistance Drain-Source RDS (on) : 0.035 Ohms


Parameters:

Technical/Catalog InformationSTY80NM60N
VendorSTMicroelectronics
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25° C74A
Rds On (Max) @ Id, Vgs35 mOhm @ 37A, 10V
Input Capacitance (Ciss) @ Vds 10100pF @ 50V
Power - Max447W
PackagingTube
Gate Charge (Qg) @ Vgs360nC @ 10V
Package / CaseMAX247?
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names STY80NM60N
STY80NM60N
497 8466 5 ND
49784665ND
497-8466-5



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