STW9N150

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Gate-Source Breakdown Voltage : +/- 30 V
Package / Case : TO-247
Continuous Drain Current : 8 A
Resistance Drain-Source RDS (on) : 2.5 Ohms
Drain-Source Breakdown Voltage : 1500 V


Features:

100% avalanche tested
Avalanche ruggedness
Gate charge minimized
Very low intrinsic capacitances
High speed switching
Very low on-resistance


Application

Switching application


Specifications

Symbol	Parameter	Value	Unit
VDS VGS ID ID IDM(1) PTOT Tj Tstg	Drain-source voltage (VGS = 0) Gate- source voltage Drain current (continuous) at TC = 25°C Drain current (continuous) at TC = 100°C Drain current (pulsed) Total dissipation at TC = 25°C Derating factor Operating junction temperature Storage temperature	1500 ± 30 8 5 32 350 0.37 55 to 150	V V A A A W W/°C °C

Description

Using the well consolidated high voltage MESH OVERLAY™ process STW9N150, STMicroelectronics has designed an advanced family of Power MOSFETs with outstanding performances. The strengthened layout coupled with the Company's proprietary edge termination structure, gives the lowest RDS(on) per area, unrivalled gate charge and switching characteristics.

Parameters:

Technical/Catalog Information	STW9N150
Vendor	STMicroelectronics
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	1500V (1.5kV)
Current - Continuous Drain (Id) @ 25° C	8A
Rds On (Max) @ Id, Vgs	2.5 Ohm @ 4A, 10V
Input Capacitance (Ciss) @ Vds	3255pF @ 25V
Power - Max	320W
Packaging	Tube
Gate Charge (Qg) @ Vgs	89.3nC @ 10V
Package / Case	TO-247-3
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	STW9N150 STW9N150 497 8465 5 ND 49784655ND 497-8465-5