STW8NK80Z

MOSFET N-Ch 800 Volt 6.2A Zener SuperMESH

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SeekIC No. : 00156191 Detail

STW8NK80Z: MOSFET N-Ch 800 Volt 6.2A Zener SuperMESH

floor Price/Ceiling Price

US $ .77~1.01 / Piece | Get Latest Price
Part Number:
STW8NK80Z
Mfg:
STMicroelectronics
Supply Ability:
5000

Price Break

  • Qty
  • 0~370
  • 370~500
  • 500~1000
  • Unit Price
  • $1.01
  • $.93
  • $.77
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 800 V
Gate-Source Breakdown Voltage : +/- 30 V Continuous Drain Current : 6.2 A
Resistance Drain-Source RDS (on) : 1.5 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-247 Packaging : Tube    

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Gate-Source Breakdown Voltage : +/- 30 V
Resistance Drain-Source RDS (on) : 1.5 Ohms
Continuous Drain Current : 6.2 A
Package / Case : TO-247
Drain-Source Breakdown Voltage : 800 V


Features:

The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device's ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device's integrity. These integrated Zener diodes thus avoid the usage of external components.




Application

·HIGH CURRENT, HIGH SPEED SWITCHING
·IDEAL FOR OFF-LINE POWER SUPPLIES,ADAPTORS AND PFC
·LIGHTING



Specifications

Symbol Parameter Value Unit
  STP8NK80Z - STW8NK80Z   STP8NK80ZFP  
VDS

Drain-source Voltage (VGS = 0)

800 V
VDGR

Drain- gate Voltage (RGS = 20 k)

800 V
VGS

Gate-source Voltage

±30 V
ID

Drain Current (continuous) at Tc = 25

6.2 6.2 (*) A
ID

Drain Current (continuous) at Tc = 100

3.9 3.9 (*) A
IDM(.)

Drain Current (pulsed)

24.8 24.8 (*) A
PTOT

Total Dissipation at Tc = 25

140 30 W

Derating Factor

1.12 0.24 W/

 VESD(G-S)

Gate source ESD(HBM-C=100pF, R=1.5 K)

 4000

 V

 dv/dt(1)

Peak Diode Recovery voltage slope

4.5

 V/ns

VISO

Insulation Withstand Voltage (DC)

-

2500

V

Tj
Tstg

Operating Junction Temperature
Storage Temperature

-55 to 150
(•)Pulse width limited by safe operating area
(1)ISD 6.2A, di/dt 200A/µs, VDD V(BR)DSS, Tj TJMAX.
(*)Limited only by maximum temperature allowed



Description

The SuperMESH™ series STW8NK80Z is obtained through an extreme optimization of ST's well established stripbased PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products.




Parameters:

Technical/Catalog InformationSTW8NK80Z
VendorSTMicroelectronics
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)800V
Current - Continuous Drain (Id) @ 25° C6.2A
Rds On (Max) @ Id, Vgs1.5 Ohm @ 3.1A, 10V
Input Capacitance (Ciss) @ Vds 1320pF @ 25V
Power - Max140W
PackagingTube
Gate Charge (Qg) @ Vgs46nC @ 10V
Package / CaseTO-247-3
FET FeatureStandard
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names STW8NK80Z
STW8NK80Z



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