MOSFET N-Ch 800 Volt 6.2A Zener SuperMESH
STW8NK80Z: MOSFET N-Ch 800 Volt 6.2A Zener SuperMESH
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Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 800 V | ||
Gate-Source Breakdown Voltage : | +/- 30 V | Continuous Drain Current : | 6.2 A | ||
Resistance Drain-Source RDS (on) : | 1.5 Ohms | Configuration : | Single | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | Through Hole | ||
Package / Case : | TO-247 | Packaging : | Tube |
The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device's ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device's integrity. These integrated Zener diodes thus avoid the usage of external components.
Symbol | Parameter | Value | Unit | |
STP8NK80Z - STW8NK80Z | STP8NK80ZFP | |||
VDS |
Drain-source Voltage (VGS = 0) |
800 | V | |
VDGR |
Drain- gate Voltage (RGS = 20 k) |
800 | V | |
VGS |
Gate-source Voltage |
±30 | V | |
ID |
Drain Current (continuous) at Tc = 25 |
6.2 | 6.2 (*) | A |
ID |
Drain Current (continuous) at Tc = 100 |
3.9 | 3.9 (*) | A |
IDM(.) |
Drain Current (pulsed) |
24.8 | 24.8 (*) | A |
PTOT |
Total Dissipation at Tc = 25 |
140 | 30 | W |
Derating Factor |
1.12 | 0.24 | W/ | |
VESD(G-S) |
Gate source ESD(HBM-C=100pF, R=1.5 K) |
4000 |
V | |
dv/dt(1) |
Peak Diode Recovery voltage slope |
4.5 |
V/ns | |
VISO |
Insulation Withstand Voltage (DC) |
- |
2500 |
V |
Tj Tstg |
Operating Junction Temperature |
-55 to 150 | ||
The SuperMESH™ series STW8NK80Z is obtained through an extreme optimization of ST's well established stripbased PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products.
Technical/Catalog Information | STW8NK80Z |
Vendor | STMicroelectronics |
Category | Discrete Semiconductor Products |
Mounting Type | Through Hole |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 800V |
Current - Continuous Drain (Id) @ 25° C | 6.2A |
Rds On (Max) @ Id, Vgs | 1.5 Ohm @ 3.1A, 10V |
Input Capacitance (Ciss) @ Vds | 1320pF @ 25V |
Power - Max | 140W |
Packaging | Tube |
Gate Charge (Qg) @ Vgs | 46nC @ 10V |
Package / Case | TO-247-3 |
FET Feature | Standard |
Drawing Number | * |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | STW8NK80Z STW8NK80Z |