Transistor Polarity
: N-Channel
Configuration
: Single
Mounting Style
: Through Hole
Continuous Drain Current
: 7.3 A
Maximum Operating Temperature
: + 150 C
Packaging
: Tube
Gate-Source Breakdown Voltage
: +/- 30 V
Package / Case
: TO-247
Drain-Source Breakdown Voltage
: 1000 V
Resistance Drain-Source RDS (on)
: 1.3 Ohms
Application· HIGH CURRENT, HIGH SPEED SWITCHING
· SWITCH MODE POWER SUPPLY (SMPS)
· DC-AC CONVERTER FOR WELDING EQUIPMENT AND UNINTERRUPTABLE POWER SUPPLY AND MOTOR DRIVESpecifications
| Symbol |
Parameter |
Value |
Unit |
VDS
|
Drain-source Voltage (VGS = 0) |
1000 |
V |
| VDGR |
Drain- gate Voltage (RGS = 20 k) |
1000 |
V |
| VGS |
Gate-source Voltage |
±30 |
V |
| ID |
Drain Current (continuous) at Tc = 25 |
8 |
A |
| ID |
Drain Current (continuous) at Tc = 100 |
5 |
A |
| IDM(•) |
Drain Current (pulsed) |
32 |
A |
| PTOT |
Total Dissipation at Tc = 25 |
190 |
W |
|
Derating Factor |
1.52 |
W/ |
|
dv/dt(1) |
Peak Diode Recovery voltage slope |
4 |
V/ns |
| Tstg |
Storage Temperature |
-65 to 150 |
|
| Tj |
Max. Operating Junction Temperature |
150 |
|
(•)Pulse width limited by safe operating area
(1)ISD 8A, di/dt 200A/µs, VDD V(BR)DSS, Tj TJMAX.DescriptionUsing the latest high voltage MESH OVERLAYTM process, STMicroelectronics STW8NB100 has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company's proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.
Parameters: | Technical/Catalog Information | STW8NB100 |
| Vendor | STMicroelectronics |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 1000V (1kV) |
| Current - Continuous Drain (Id) @ 25° C | 7.3A |
| Rds On (Max) @ Id, Vgs | 1.45 Ohm @ 3.6A, 10V |
| Input Capacitance (Ciss) @ Vds | 2900pF @ 25V |
| Power - Max | 190W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 95nC @ 10V |
| Package / Case | TO-247-3 |
| FET Feature | Standard |
| Lead Free Status | Contains Lead |
| RoHS Status | RoHS Non-Compliant |
| Other Names | STW8NB100
STW8NB100
497 2646 5 ND
49726465ND
497-2646-5
|
STW8NB100 Data Sheet
