Position: Home  > All Categories> Integrated Circuits (ICs) > STW55NM60ND

STW55NM60ND

MOSFET N-channel 600 V FDMesh

product image

STW55NM60ND Picture
See larger image
SeekIC No. : 00148769 Detail

STW55NM60ND: MOSFET N-channel 600 V FDMesh

STW55NM60ND Data Sheet

floor Price/Ceiling Price

US $ 7.66~10.88 / Piece | Get Latest Price
Part Number:
STW55NM60ND
Mfg:
STMicroelectronics
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~10
  • 10~100
  • 100~250
  • Unit Price
  • $10.88
  • $9.14
  • $8.41
  • $7.66
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
View more price & deliveries
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/11/21

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 600 V
Gate-Source Breakdown Voltage : +/- 25 V Continuous Drain Current : 51 A
Resistance Drain-Source RDS (on) : 0.06 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-247 Packaging : Tube    

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Drain-Source Breakdown Voltage : 600 V
Package / Case : TO-247
Gate-Source Breakdown Voltage : +/- 25 V
Continuous Drain Current : 51 A
Resistance Drain-Source RDS (on) : 0.06 Ohms


Parameters:

Technical/Catalog InformationSTW55NM60ND
VendorSTMicroelectronics
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25° C51A
Rds On (Max) @ Id, Vgs60 mOhm @ 25.5A, 10V
Input Capacitance (Ciss) @ Vds 5800pF @ 50V
Power - Max350W
PackagingTube
Gate Charge (Qg) @ Vgs190nC @ 10V
Package / CaseTO-247-3
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names STW55NM60ND
STW55NM60ND
497 7036 5 ND
49770365ND
497-7036-5



Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
Kits
IT243
UVSC-110-4E1
Optical Inspection Equipment
AA924
A21K4B
Sensors, Transducers
GP2Y0D340K
PAN3509DH-TXWA
Optoelectronics
SFH7770
TLP423J
Prototyping Products
AVT4168
DE1
Batteries, Chargers, Holders
ICR18650-28A
ICR18650-26F/h
View more