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STW55NM50N

MOSFET N-channel 500V, 54 A Power II Mdmesh

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SeekIC No. : 00160884 Detail

STW55NM50N: MOSFET N-channel 500V, 54 A Power II Mdmesh

STW55NM50N Data Sheet

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Part Number:
STW55NM50N
Mfg:
STMicroelectronics
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 500 V
Gate-Source Breakdown Voltage : +/- 25 V Continuous Drain Current : 54 A
Resistance Drain-Source RDS (on) : 0.054 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-247 Packaging : Tube    

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Drain-Source Breakdown Voltage : 500 V
Continuous Drain Current : 54 A
Package / Case : TO-247
Gate-Source Breakdown Voltage : +/- 25 V
Resistance Drain-Source RDS (on) : 0.054 Ohms


Parameters:

Technical/Catalog InformationSTW55NM50N
VendorSTMicroelectronics
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)500V
Current - Continuous Drain (Id) @ 25° C54A
Rds On (Max) @ Id, Vgs54 mOhm @ 27A, 10V
Input Capacitance (Ciss) @ Vds 5800pF @ 50V
Power - Max350W
PackagingTube
Gate Charge (Qg) @ Vgs180nC @ 10V
Package / CaseTO-247-3
FET FeatureLogic Level Gate
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names STW55NM50N
STW55NM50N
497 8462 5 ND
49784625ND
497-8462-5



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