MOSFET N-Ch 200 Volt 40 Amp
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Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 200 V | ||
Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | 40 A | ||
Resistance Drain-Source RDS (on) : | 0.045 Ohms | Configuration : | Single | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | Through Hole | ||
Package / Case : | TO-247 | Packaging : | Tube |
Symbol | Parameter | Value | Unit |
VDS |
Drain-source Voltage (VGS = 0) |
200 | V |
VDGR |
Drain- gate Voltage (RGS = 20 k) |
200 | V |
VGS |
Gate-source Voltage |
±20 | V |
ID |
Drain Current (continuous) at Tc = 25 |
40 | A |
ID |
Drain Current (continuous) at Tc = 100 |
25 | A |
IDM(+) |
Drain Current (pulsed) |
160 | A |
PTOT |
Total Dissipation at Tc = 25 |
160 | W |
Derating Factor |
1.28 | W/ | |
dv/dt(1) |
Peak Diode Recovery voltage slope |
12 |
V/ns |
Tj Tstg |
Operating Junction Temperature |
-55 to 150 |
This STW40N20 MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high-efficiency isolated DC-DC converters.
Technical/Catalog Information | STW40N20 |
Vendor | STMicroelectronics |
Category | Discrete Semiconductor Products |
Mounting Type | Through Hole |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 200V |
Current - Continuous Drain (Id) @ 25° C | 40A |
Rds On (Max) @ Id, Vgs | 45 mOhm @ 20A, 10V |
Input Capacitance (Ciss) @ Vds | 2500pF @ 25V |
Power - Max | 160W |
Packaging | Tube |
Gate Charge (Qg) @ Vgs | 75nC @ 10V |
Package / Case | TO-247-3 |
FET Feature | Standard |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | STW40N20 STW40N20 497 4427 5 ND 49744275ND 497-4427-5 |