Features: *TYPICAL RDS(on) = 0.013 W* EXCEPTIONAL dv/dt CAPABILITY* 100% AVALANCHE TESTED* LOW GATE CHARGE 100 * APPLICATIONORIENTED CHARACTERIZATIONApplication*HIGH CURRENT, HIGH SPEED SWITCHING* SOLENOID AND RELAY DRIVERS* MOTOR CONTROL, AUDIO AMPLIFIERS* DC-DC & DC-AC CONVERTERS* AUTOMOTIVE...
STV60NE06-16: Features: *TYPICAL RDS(on) = 0.013 W* EXCEPTIONAL dv/dt CAPABILITY* 100% AVALANCHE TESTED* LOW GATE CHARGE 100 * APPLICATIONORIENTED CHARACTERIZATIONApplication*HIGH CURRENT, HIGH SPEED SWITCHING* S...
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Symbol | Parameter | Value | Unit |
VDS | Drain-source Voltage (VGS = 0) | 60 | V |
VDGR | Drain- gate Voltage (RGS = 20 kW) | 60 | V |
VGS | Gate-source Voltage | ± 20 | V |
ID | Drain Current (continuous) at Tc = 25 | 60 | A |
ID | Drain Current (continuous) at Tc = 100 | 42 | A |
IDM(•) | Drain Current (pulsed) | 240 | A |
Ptot | Total Dissipation at Tc = 25 | 150 | W |
Derating Factor | 1 | W/ | |
dv/dt | Peak Diode Recovery voltage slope | 6 | V/ns |
Tstg | Storage Temperature | -65 to 175 | |
Tj | Max. Operating Junction Temperature | 175 |
This Power Mosfet STV60NE06-16 is the latest development of STMicroelectronics unique "Single Feature Size]" strip-based process. The resulting transistor STV60NE06-16 shows extremely high packing density for low on-resistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.