STV250N55F3

MOSFET N-channel 55 V

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SeekIC No. : 00147258 Detail

STV250N55F3: MOSFET N-channel 55 V

floor Price/Ceiling Price

US $ 2.59~3.9 / Piece | Get Latest Price
Part Number:
STV250N55F3
Mfg:
STMicroelectronics
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~10
  • 10~100
  • 100~250
  • Unit Price
  • $3.9
  • $3.14
  • $2.86
  • $2.59
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/12/25

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 55 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 250 A
Resistance Drain-Source RDS (on) : 1.5 mOhms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : SMD/SMT
Package / Case : PowerSO-10 Packaging : Reel    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 55 V
Resistance Drain-Source RDS (on) : 1.5 mOhms
Package / Case : PowerSO-10
Continuous Drain Current : 250 A


Parameters:

Technical/Catalog InformationSTV250N55F3
VendorSTMicroelectronics
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)55V
Current - Continuous Drain (Id) @ 25° C250A
Rds On (Max) @ Id, Vgs2.2 mOhm @ 75A, 10V
Input Capacitance (Ciss) @ Vds 6800pF @ 25V
Power - Max300W
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs100nC @ 10V
Package / CasePowerSO-10 Exposed Bottom Pad
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names STV250N55F3
STV250N55F3
497 7030 2 ND
49770302ND
497-7030-2



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