STV250N55F3, US $ 2.59-3.9 , STMicroelectronics, STV250N55F3 DataSheet download, circuit diagram from SeekIC.com

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STV250N55F3: MOSFET N-channel 55 V

STV250N55F3 Data Sheet

US $ 2.59~3.9 / Piece | Get Latest Price

Part Number:: STV250N55F3
Mfg:: STMicroelectronics
Supply Ability:: 5000

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$3.9
$3.14
$2.86
$2.59

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Product Details

Quick Details

Transistor Polarity :	N-Channel	Drain-Source Breakdown Voltage :	55 V
Gate-Source Breakdown Voltage :	+/- 20 V	Continuous Drain Current :	250 A
Resistance Drain-Source RDS (on) :	1.5 mOhms	Configuration :	Single
Maximum Operating Temperature :	+ 175 C	Mounting Style :	SMD/SMT
Package / Case :	PowerSO-10	Packaging :	Reel

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 55 V
Resistance Drain-Source RDS (on) : 1.5 mOhms
Package / Case : PowerSO-10
Continuous Drain Current : 250 A

Parameters:

Technical/Catalog Information	STV250N55F3
Vendor	STMicroelectronics
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	55V
Current - Continuous Drain (Id) @ 25° C	250A
Rds On (Max) @ Id, Vgs	2.2 mOhm @ 75A, 10V
Input Capacitance (Ciss) @ Vds	6800pF @ 25V
Power - Max	300W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	100nC @ 10V
Package / Case	PowerSO-10 Exposed Bottom Pad
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	STV250N55F3 STV250N55F3 497 7030 2 ND 49770302ND 497-7030-2

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STV250N55F3

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