STV10NA40

The STV10NA40 is N-channel enhancement mode fast power MOS transistor. The applications of it are: high current, high speed switching, switch mode power supplies, DC-AC converters for welding quipment and uninterruptible power supplies and motor drive. It represents the most advanced high voltage technology.

Features of the STV10NA40 are:(1)typical RDS(ON)=0.46;(2)±30V gate to sourece voltage rating;(3)100% avalanche tested;(4)repetitive avalanche data at 100;(5)low intrinsic capacitances;(6)gate charge minimized;(7)reduced threshlod voltage spread.

The absolute maximum ratings of the STV10NA40 can be summarized as:(1)drain-source voltage:400V;(2)drain-gate voltage:400V;(3)gate-source voltage:±30V;(4)drain current at Tc=25:10A;(5)drain current at Tc=100:6.3A;(6)drain current(plused):40A;(7)total dissipation at Tc=25:125W;(8)derating factor:1W/;(9)storage temperature:-65 to 150;(10)max. operating junction temperature:150.

If you want to know more information such as the electrical characteristics about the STV10NA40, please download the datasheet in www.seekic.com or www.chinaicmart.com .