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STU8NM60ND

MOSFET N-CH 6V 7A FDMESH FDMesh

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SeekIC No. : 00155667 Detail

STU8NM60ND: MOSFET N-CH 6V 7A FDMESH FDMesh

STU8NM60ND Data Sheet

floor Price/Ceiling Price

US $ .99~1.03 / Piece | Get Latest Price
Part Number:
STU8NM60ND
Mfg:
STMicroelectronics
Supply Ability:
5000

Price Break

  • Qty
  • 0~2300
  • 2300~5000
  • Unit Price
  • $1.03
  • $.99
  • Processing time
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/12/25

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 600 V
Gate-Source Breakdown Voltage : +/- 30 V Continuous Drain Current : 7 A
Resistance Drain-Source RDS (on) : 0.7 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : IPAK Packaging : Tube    

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Gate-Source Breakdown Voltage : +/- 30 V
Drain-Source Breakdown Voltage : 600 V
Continuous Drain Current : 7 A
Package / Case : IPAK
Resistance Drain-Source RDS (on) : 0.7 Ohms


Parameters:

Technical/Catalog InformationSTU8NM60ND
VendorSTMicroelectronics
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25° C7A
Rds On (Max) @ Id, Vgs700 mOhm @ 3.5A, 10V
Input Capacitance (Ciss) @ Vds 560pF @ 50V
Power - Max70W
PackagingTube
Gate Charge (Qg) @ Vgs22nC @ 10V
Package / CaseIPak, TO-251, DPak (3 straight short leads + tab)
FET FeatureStandard
Drawing Number497; 0068771; U; 3
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names STU8NM60ND
STU8NM60ND



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