MOSFET N-CH 6V 7A FDMESH FDMesh
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Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 600 V | ||
Gate-Source Breakdown Voltage : | +/- 30 V | Continuous Drain Current : | 7 A | ||
Resistance Drain-Source RDS (on) : | 0.7 Ohms | Configuration : | Single | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | Through Hole | ||
Package / Case : | IPAK | Packaging : | Tube |
Technical/Catalog Information | STU8NM60ND |
Vendor | STMicroelectronics |
Category | Discrete Semiconductor Products |
Mounting Type | Through Hole |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 600V |
Current - Continuous Drain (Id) @ 25° C | 7A |
Rds On (Max) @ Id, Vgs | 700 mOhm @ 3.5A, 10V |
Input Capacitance (Ciss) @ Vds | 560pF @ 50V |
Power - Max | 70W |
Packaging | Tube |
Gate Charge (Qg) @ Vgs | 22nC @ 10V |
Package / Case | IPak, TO-251, DPak (3 straight short leads + tab) |
FET Feature | Standard |
Drawing Number | 497; 0068771; U; 3 |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | STU8NM60ND STU8NM60ND |