Position: Home  > All Categories> Integrated Circuits (ICs) > STU8NC90ZI

STU8NC90ZI

Features: `TYPICAL RDS(on) = 1.1`EXTREMELY HIGH dv/dt CAPABILITY`GATE-TO-SOURCE ZENER DIODES`100% AVALANCHE TESTED` VERY LOW INTRINSIC CAPACITANCES`GATE CHARGE MINIMIZEDApplication·SINGLE-ENDED SMPS IN MONITORS, COMPUTER AND INDUSTRIAL APPLICATION·WELDING EQUIPMENTSpecifications Symbol Par...

product image

STU8NC90ZI Picture
See larger image
SeekIC No. : 004508942 Detail

STU8NC90ZI: Features: `TYPICAL RDS(on) = 1.1`EXTREMELY HIGH dv/dt CAPABILITY`GATE-TO-SOURCE ZENER DIODES`100% AVALANCHE TESTED` VERY LOW INTRINSIC CAPACITANCES`GATE CHARGE MINIMIZEDApplication·SINGLE-ENDED SMPS...

STU8NC90ZI Data Sheet

floor Price/Ceiling Price

Get Latest Price
Part Number:
STU8NC90ZI
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/12/25

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Description



Features:

`TYPICAL RDS(on) = 1.1
`EXTREMELY HIGH dv/dt CAPABILITY
`GATE-TO-SOURCE ZENER DIODES
`100% AVALANCHE TESTED
` VERY LOW INTRINSIC CAPACITANCES
`GATE CHARGE MINIMIZED


Application

·SINGLE-ENDED SMPS IN MONITORS, COMPUTER AND INDUSTRIAL APPLICATION
·WELDING EQUIPMENT


Specifications

Symbol
 Parameter
Value
Unit
 
STU8NC90Z
STU8NC90ZI
VDS
 Drain-source Voltage (VGS = 0)
900
V
VDGR
 Drain-gate Voltage (RGS = 20 k)
900
V
VGS
 Gate- source Voltage
±25
V
ID
 Drain Current (continuos) at TC = 25°C
7
7(*)
A
ID
 Drain Current (continuos) at TC = 100°C
4.4
4.4(*)
A
IDM (1)
 Drain Current (pulsed)
28
28(*)
A
PTOT
 Total Dissipation at TC = 25°C
160
55
W
 Derating Factor
1.28
0.44
W/°C
IGS
 Gate-source Current
±50
mA
VESD(G-S)
 Gate source ESD(HBM-C=100pF, R=15K)
4
KV
dv/dt(l)
 Peak Diode Recovery voltage slope
2
V/ns
VISO
 Insulation Winthstand Voltage (DC)
-
2000
V
Tstg
 Storage Temperature
65 to 150
°C
Tj
 Max. Operating Junction Temperature
150
°C
(•)Pulse width limited by safe operating area
(1)ISD 7A, di/dt 100A/s, VDD V(BR)DSS, TjTJMAX
(*)Limited only by maximum temperature allowed


Description

The STU8NC90ZI third generation of MESH OVERLAY™ Power MOSFETs for very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-to-back Zener diodes between gate and source. Such arrangement gives extra ESD capability with higher ruggedness performance as requested by a large variety of single-switch applications.




Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
Memory Cards, Modules
WT32
VTL5C7
Inductors, Coils, Chokes
DR127-330-R
SD53-100-R
Fans, Thermal Management
3610ML-05W-B49
1608KL-05W-B39
Discrete Semiconductor Products
T508N12TOF
MUR20040
Line Protection, Backups
BX0023
A20B-1008-0550
Cable Assemblies
CS1W-CN114
XW2Z-500T
View more