Features: TYPICAL RDS(on) = 1.3 ± 30V GATE TO SOURCE VOLTAGE RATING REPETITIVE AVALANCHE TESTED DATA AT 100 LOW INTRINSIC CAPACITANCE100% AVALANCHE TESTEDGATE CHARGE MINIMIZEDREDUCED THRESHOLD VOLTAGE SPREADApplicationHIGH CURRENT, HIGH SPEED SWITCHING SWITCH MODE POWER SUPPLIES (SMPS) CONSUMER A...
STU7NA80: Features: TYPICAL RDS(on) = 1.3 ± 30V GATE TO SOURCE VOLTAGE RATING REPETITIVE AVALANCHE TESTED DATA AT 100 LOW INTRINSIC CAPACITANCE100% AVALANCHE TESTEDGATE CHARGE MINIMIZEDREDUCED THRESHOLD VOLT...
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Symbol |
Parameter |
Value |
Unit |
VDS |
Drain-source Voltage (VGS = 0) |
800 |
V |
VDGR |
Drain- gate Voltage (RGS = 20 k) |
800 |
V |
VGS |
Gate-source Voltage |
±30 |
V |
ID |
Drain Current (continuous) at Tc = 25 |
6.5 |
A |
ID |
Drain Current (continuous) at Tc = 100 |
4.3 |
A |
IDM(`) |
Drain Current (pulsed) |
26 |
A |
Ptot |
Total Dissipation at Tc = 25 |
145 |
W |
Derating Factor |
1.16 |
W/ | |
Tstg |
Storage Temperature |
-65 to 150 |
°C |
Tj |
Max. Operating Junction Temperature |
150 |
°C |
The Max220TM package STU7NA80 is a new high volume power package exibiting the same footprint as the industry standard TO-220, but designed to accomodate much larger silicon chips, normally supplied in bigger packages. The increased die capacity makes the STU7NA80 ideal to reduce component count in multiple paralleled TO-220 designs and save board space with respect to larger packages.