Features: TYPE VDSS RDS(on) ID STU6NA90 900 V < 2 5.8 A` TYPICAL RDS(on) = 1.5 ` ± 30V GATE TO SOURCE VOLTAGE RATING` REPETITIVE AVALANCHE TESTED` LOW INTRINSIC CAPACITANCE` 100% AVALANCHE TESTED` GATE CHARGE MINIMIZED` REDUCED THRESHOLD VOLTAGE SPREADApplication· ...
STU6NA90: Features: TYPE VDSS RDS(on) ID STU6NA90 900 V < 2 5.8 A` TYPICAL RDS(on) = 1.5 ` ± 30V GATE TO SOURCE VOLTAGE RATING` REPETITIVE AVALANCHE TESTED` LOW INTRINSIC CAPA...
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TYPE |
VDSS |
RDS(on) |
ID |
STU6NA90 |
900 V |
< 2 |
5.8 A |
Symbol |
Parameter |
Value |
Unit |
VDS |
Drain-source Voltage (VGS = 0) |
900 |
V |
VDGR |
Drain- gate Voltage (RGS = 20 k) |
900 |
V |
VGS |
Gate-source Voltage |
±30 |
V |
ID |
Drain Current (continuous) at Tc = 25 |
5.8 |
A |
ID |
Drain Current (continuous) at Tc = 100 |
3.7 |
A |
IDM(`) |
Drain Current (pulsed) |
23.2 |
A |
Ptot |
Total Dissipation at Tc = 25 |
145 |
W |
Derating Factor |
1.16 |
W/ | |
Tstg |
Storage Temperature |
-65 to 150 |
|
Tj |
Max. Operating Junction Temperature |
150 |
The Max220TM package STU6NA90 is a new high volume power package exibiting the same footprint as the industry standard TO-220, but designed to accomodate much larger silicon chips, normally supplied in bigger packages. The increased die capacity STU6NA90 makes the device ideal to reduce component count in multiple paralleled TO-220 designs and save board space with respect to arger packages.