Transistor Polarity
: N-Channel
Gate-Source Breakdown Voltage
: +/- 20 V
Configuration
: Single
Maximum Operating Temperature
: + 175 C
Mounting Style
: Through Hole
Packaging
: Tube
Continuous Drain Current
: 80 A
Drain-Source Breakdown Voltage
: 55 V
Package / Case
: IPAK
Resistance Drain-Source RDS (on)
: 0.0085 Ohms
Features:
|
Type |
VDSS |
RDS(on) |
ID |
Pw |
|
STB60N55F3
STD60N55F3
STF60N55F3
STP60N55F3
STU60N55F3 |
55V
55V
55V
55V
55V |
<8.5m
<8.5m
<8.5m
<8.5m
<8.5m |
80A
80A
42A
80A
80A |
110W
110W
30W
110W
110W |
` Standard threshold drive
` 100% avalanche testedApplication· Switching applicationDescriptionThis n-channel enhancement mode Power MOSFET STU60N55F3 is the latest refinement of STMicroelectronics' unique "Single Feature Size™" strip-based process, which has decreased the critical alignment steps, offering remarkable manufacturing reproducibility. The outcome is a transistor with extremely high packing density for low onresistance, rugged avalanche characteristics and low gate charge.
Parameters: | Technical/Catalog Information | STU60N55F3 |
| Vendor | STMicroelectronics |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 55V |
| Current - Continuous Drain (Id) @ 25° C | 80A |
| Rds On (Max) @ Id, Vgs | 8.5 mOhm @ 32A, 10V |
| Input Capacitance (Ciss) @ Vds | 2200pF @ 25V |
| Power - Max | 110W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 45nC @ 10V |
| Package / Case | IPak, TO-251, DPak, VPak (3 straight leads + tab) |
| FET Feature | Standard |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | STU60N55F3
STU60N55F3
|
STU60N55F3 Data Sheet
