MOSFET N-Ch, 620V-2.2ohms 2.7A
SeekIC Buyer Protection PLUS - newly updated for 2013!
268 Transactions
All payment methods are secure and covered by SeekIC Buyer Protection PLUS.
Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 620 V | ||
Gate-Source Breakdown Voltage : | +/- 30 V | Continuous Drain Current : | 2.7 A | ||
Resistance Drain-Source RDS (on) : | 2.5 Ohms | Configuration : | Single | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | Through Hole | ||
Package / Case : | IPAK | Packaging : | Tube |
Technical/Catalog Information | STU3N62K3 |
Vendor | STMicroelectronics |
Category | Discrete Semiconductor Products |
Mounting Type | Through Hole |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 620V |
Current - Continuous Drain (Id) @ 25° C | 2.7A |
Rds On (Max) @ Id, Vgs | 2.5 Ohm @ 1.4A, 10V |
Input Capacitance (Ciss) @ Vds | 385pF @ 25V |
Power - Max | 45W |
Packaging | Tube |
Gate Charge (Qg) @ Vgs | 13nC @ 10V |
Package / Case | IPak, TO-251, DPak, VPak (3 straight leads + tab) |
FET Feature | Standard |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | STU3N62K3 STU3N62K3 |