STS7C4F30L

FET Type: N and P-Channel
FET Feature: Logic Level Gate
Mounting Type: Surface Mount
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Drain to Source Voltage (Vdss): 30V
Power - Max: 2W
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Packaging: Tape & Reel (TR)
Series: STripFET™
Manufacturer: STMicroelectronics
Gate Charge (Qg) @ Vgs: 23nC @ 5V
Current - Continuous Drain (Id) @ 25° C: 7A, 4A
Rds On (Max) @ Id, Vgs: 22 mOhm @ 3.5A, 10V
Input Capacitance (Ciss) @ Vds: 1050pF @ 25V


Application

·DC/DC CONVERTERS
·BATTERY MANAGEMENT IN NOMADIC EQUIPMENT
·POWER MANAGEMENT IN CELLULAR PHONES


Pinout




Specifications

Symbol	Parameter	Value		Unit
		N-CHANNEL	P-CHANNEL
VDS	Drain-source Voltage (VGS = 0)	30	30	V
VDGR	Drain- gate Voltage (RGS = 20 kΏ)	30	30	V
VGS	Gate-Source Voltage	±20		V
ID	Drain Current (continuous) at Tc = 25	7	4	A
ID	Drain Current (continuous) at Tc = 100	4.4	2.5	A
IDM(1)	Drain Current (pulsed)	28	16	A
PTOT	Total Dissipation at TC = 25°C Single Operation Total Dissipation at TC = 25°C Dual Operation	1.6 2		W W
Tstg	Storage Temperature	-65 to 150
Tj	Max. Operating Junction Temperature	150

(1)Pulse width limited by safe operating area .



Description

This Power MOSFET STS7C4F30L is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transisto shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.