STS4PF20V

Mounting Style : SMD/SMT
Package / Case : SO-8
Packaging : Reel
Transistor Polarity : P-Channel
Drain-Source Breakdown Voltage : - 20 V
Maximum Operating Temperature : + 150 C
Configuration : Single Quad Drain Triple Source
Gate-Source Breakdown Voltage : +/- 12 V
Resistance Drain-Source RDS (on) : 0.09 Ohms
Continuous Drain Current : 4 A


Application

 MOBILE PHONE APPLICATIONS
DC-DC CONVERTERS
BATTERY MANAGEMENT IN NOMADIC EQUIPMENT


Pinout




Specifications

Symbol	Parameter	Value	Unit
VDS	Drain-source Voltage (VGS = 0)	20	V
VDGR	Drain- gate Voltage (RGS = 20 k)	20	V
VGS	Gate-Source Voltage	± 12	V
ID	Drain Current (continuous) at Tc = 25	4	A
ID	Drain Current (continuous) at Tc = 100	2.5	A
IDM(`)	Drain Current (pulsed)	16	A
PTOT	Total Dissipation at Tc = 25	2.5	W

(•)Pulse width limited by safe operating area


Description

This Power MOSFET STS4PF20V is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.