STS4DPFS30L

MOSFET P-Ch 30 Volt 5 Amp

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SeekIC No. : 00160930 Detail

STS4DPFS30L: MOSFET P-Ch 30 Volt 5 Amp

floor Price/Ceiling Price

Part Number:
STS4DPFS30L
Mfg:
STMicroelectronics
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/4

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Product Details

Quick Details

Transistor Polarity : P-Channel Drain-Source Breakdown Voltage : - 30 V
Gate-Source Breakdown Voltage : +/- 16 V Continuous Drain Current : 4 A
Resistance Drain-Source RDS (on) : 0.045 Ohms Configuration : Single Dual Drain
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : SO-8 Packaging : Reel    

Description

Mounting Style : SMD/SMT
Package / Case : SO-8
Packaging : Reel
Transistor Polarity : P-Channel
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : - 30 V
Continuous Drain Current : 4 A
Gate-Source Breakdown Voltage : +/- 16 V
Configuration : Single Dual Drain
Resistance Drain-Source RDS (on) : 0.045 Ohms


Pinout

  Connection Diagram


Specifications

Symbol
Parameter
Value
Unit
VDS
Drain-source Voltage (VGS = 0)
30
V
VDGR
Drain- gate Voltage (RGS = 20 k)
30
V
VGS
Gate-Source Voltage
± 20
V
ID
Drain Current (continuous) at Tc = 25
4
A
ID

Drain Current (continuous) at Tc = 100
3.4
A
IDM(`)
Drain Current (pulsed)
16
A
PTOT
Total Dissipation at Tc = 25
1.6
W
(•)Pulse width limited by safe operating area


Description

This STS4DPFS30L associates the latest low voltage STripFET™ in p-channel version to a low drop Schottky diode. Such configuration is extremely versatile in implementing, a large variety of DC-DC converters for printers, portable equipment, and cellular phones.




Parameters:

Technical/Catalog InformationSTS4DPFS30L
VendorSTMicroelectronics (VA)
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityP-Channel
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25° C5A
Rds On (Max) @ Id, Vgs55 mOhm @ 2.5A, 10V
Input Capacitance (Ciss) @ Vds 1350pF @ 25V
Power - Max2.5W
PackagingCut Tape (CT)
Gate Charge (Qg) @ Vgs16nC @ 5V
Package / Case8-SOIC (3.9mm Width)
FET FeatureDiode (Isolated)
Lead Free StatusContains Lead
RoHS StatusRoHS Non-Compliant
Other Names STS4DPFS30L
STS4DPFS30L
497 4397 1 ND
49743971ND
497-4397-1



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