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STS4DNF60

MOSFET N Ch 60V 0.070 Ohm 4A

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SeekIC No. : 00161768 Detail

STS4DNF60: MOSFET N Ch 60V 0.070 Ohm 4A

STS4DNF60 Data Sheet

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Part Number:
STS4DNF60
Mfg:
STMicroelectronics
Supply Ability:
5000

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  • 1~5000
  • Unit Price
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  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 60 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 4 A
Resistance Drain-Source RDS (on) : 0.09 Ohms Configuration : Dual Dual Drain
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : SO-8 Packaging : Reel    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Mounting Style : SMD/SMT
Package / Case : SO-8
Packaging : Reel
Maximum Operating Temperature : + 150 C
Configuration : Dual Dual Drain
Drain-Source Breakdown Voltage : 60 V
Resistance Drain-Source RDS (on) : 0.09 Ohms
Continuous Drain Current : 4 A


Parameters:

Technical/Catalog InformationSTS4DNF60
VendorSTMicroelectronics
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET Polarity2 N-Channel (Dual)
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25° C4A
Rds On (Max) @ Id, Vgs90 mOhm @ 2A, 10V
Input Capacitance (Ciss) @ Vds 315pF @ 25V
Power - Max2W
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs10nC @ 10V
Package / Case8-SOIC
FET FeatureLogic Level Gate
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names STS4DNF60
STS4DNF60
497 8041 2 ND
49780412ND
497-8041-2



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