STS4DNF30L

Transistor Polarity : N-Channel
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 30 V
Maximum Operating Temperature : + 150 C
Configuration : Dual Dual Drain
Continuous Drain Current : 4 A
Gate-Source Breakdown Voltage : +/- 16 V
Resistance Drain-Source RDS (on) : 50 mOhms
Package / Case : SO N


Application

 BATTERY MANAGMENT IN NOMADIC EQUIPMENT
POWER MANAGMENT IN CELLULAR PHONES
DC MOTOR DRIVE


Pinout




Specifications

Symbol	Parameter	Value	Unit
VDS	Drain-source Voltage (VGS = 0)	30	V
VDGR	Drain- gate Voltage (RGS = 20 k)	30	V
VGS	Gate-Source Voltage	± 16	V
ID	Drain Current (continuous) at Tc = 25	4	A
ID	Drain Current (continuous) at Tc = 100	2.5	A
IDM(`)	Drain Current (pulsed)	16	A
PTOT	Total Dissipation at Tc = 25	2	W

(•)Pulse width limited by safe operating area


Description

This Power MOSFET STS4DNF30L is the second generation of STMicroelectronics unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.

Parameters:

Technical/Catalog Information	STS4DNF30L
Vendor	STMicroelectronics (VA)
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	2 N-Channel (Dual)
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25° C	4A
Rds On (Max) @ Id, Vgs	50 mOhm @ 2A, 10V
Input Capacitance (Ciss) @ Vds	330pF @ 25V
Power - Max	2W
Packaging	Digi-Reel?
Gate Charge (Qg) @ Vgs	9nC @ 10V
Package / Case	8-SOIC (3.9mm Width)
FET Feature	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	STS4DNF30L STS4DNF30L 497 5251 6 ND 49752516ND 497-5251-6